Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods

In this work, we demonstrate the MBE growth of a systematic series GaAsBi/GaAs multiple quantum well devices with up to 120 periods and report on their structural optical characterisation. TEM images confirm incorporation record number wells for material, while showing reasonable thickness uniformity. Fitting XRD data becomes worse as increases due strain relaxation out-of-plane inhomogeneity. The are compared previous grown in our group using PL found have less severe thicker barriers lower average MQW stack, despite containing greater wells.